Si+ implanted AlGaN/GaN HEMTs with reduced on-resistance-Reference-Cited by-同舟云学术

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Si+ implanted AlGaN/GaN HEMTs with reduced on-resistance

Published:2007-06 Issue:7 Volume:4 Page:2704-2707
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Nomoto Kazuki,Mishima Tomoyoshi,Satoh Masataka,Nakamura Tohru

Publisher

Wiley

Subject

Condensed Matter Physics

Reference3 articles.

1. Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts

2. Performance enhancement by using the n/sup +/-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication

3. Source Resistance Reduction of AlGaN–GaN HFETs with Novel Superlattice Cap Layer

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of silicon ion-implanted GaN and AlGaN;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02

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