High performance and high reliability AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

High performance and high reliability AlGaN/GaN HEMTs

Published:2009-06 Issue:6 Volume:206 Page:1135-1144
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi (a)

Author:

Kikkawa Toshihide,Makiyama Kozo,Ohki Toshihiro,Kanamura Masahito,Imanishi Kenji,Hara Naoki,Joshin Kazukiyo

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. T. Kikkawa et al., CS-MANTECH Digest (2006), p. 171.

2. T. Inoue et al., IEEE Trans. Microw. Theory Tech. (2005), p. 74.

3. Y.-F. Wu et al., IEEE IEDM Technical Digest (2005), p. 583.

4. T. Kikkawa et al., IEEE IEDM Technical Digest (2001), p. 585.

5. M. Kanamura et al., Extended Abstracts of Int. Conf. Solid State Devices and Materials (2003), p. 916.

Cited by 91 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications;Applied Physics Express;2024-07-01

2. Comparison of SiN_x Dielectric Layer Grown by Plasma‐Enhanced Chemical Vapor Deposition, Low‐Pressure Chemical Vapor Deposition, and Metal‐Organic Chemical Vapor Deposition in Diamond‐ and GaN‐Based Integrated Devices;physica status solidi (b);2024-05-26

3. Role of carbon in n-type bulk GaN crystals;Journal of Crystal Growth;2024-04

4. Effect of Stress Voltage and Temperature on the Reliability of AlGaN/GaN HEMTs for RF and Microwave Application;physica status solidi (a);2023-12-07

5. Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures;Journal of Crystal Growth;2023-12