Enhanced performance of large‐area vertical light‐emitting diodes treated by laser irradiation-Reference-Cited by-同舟云学术

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Enhanced performance of large‐area vertical light‐emitting diodes treated by laser irradiation

Published:2017-06 Issue:6 Volume:12 Page:369-372
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Li Yang¹,Wu Qun²,Meng Fan‐Yi²,Sung Ho‐Kun³,Yao Zhao⁴,Sun Run‐Yuan¹,Wang Cong²

Affiliation:

1. School of Information Science and EngineeringUniversity of JinanJinan250022People's Republic of China

2. Department of Microwave EngineeringHarbin Institute of TechnologyHarbin150001People's Republic of China

3. Korea Advanced Nano Fab Center (KANC)Suwon‐si443270South Korea

4. College of Electronic and Information EngineeringQingdao UniversityQingdao266071People's Republic of China

Funder

National Natural Science Foundation of China

National Research Foundation of Korea

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2016.0699

Reference18 articles.

1. Thermal analysis of a nano-pore silicon-based substrate using a YAG phosphor supported COB packaged LED module

2. Numerical simulations of light‐extraction efficiencies of light‐emitting diodes on micro and nanopatterned sapphire substrates

3. SiC backside source grounding process for AlGaN/GaN HEMT by physical dicing method

4. Electrical characterization and surface morphology of optimized Ti/Al/Ta/Au ohmic contacts for AlGaN/GaN HEMTs;Wang C.;Nanoscale Res. Lett.,2012

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1. Size-Dependent Quantum Efficiency of Flip-Chip Light-Emitting Diodes at High Current Injection Conditions;Photonics;2021-03-24

2. Performance-enhanced vertical LED using laser irradiation treatment to control wafer-level n-GaN protrusion arrays;Materials Science in Semiconductor Processing;2020-09

3. Characteristics and techniques of GaN-based micro-LEDs for application in next-generation display;Journal of Semiconductors;2020-04-01

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