InAs nanowire MOSFET differential active mixer on Si‐substrate
Author:
Affiliation:
1. Department of Electrical and Information TechnologiesLund UniversityBox 118 S‐221 00LundSweden
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2013.4219
Reference9 articles.
1. Performance evaluation of III–V nanowire transistors;Jansson K.;IEEE Trans. Electron Devices,2012
2. Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's
3. High quality InAs and GaSb thin layers grown on Si (111);Ghalamestani S.G.;J. Crystal Growth,2011
4. Extrinsic and intrinsic performance of vertical InAs nanowire MOSFETs on Si substrates;Persson K.‐M.;Electron Devices, IEEE Transactions,2013
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3. (Invited) The Structure-Dependent Properties of InAs Nanowires and Their Devices;ECS Transactions;2016-08-18
4. ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment;Applied Physics Letters;2016-03-28
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