Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates-Reference-Cited by-同舟云学术

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Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

Published:2013-09 Issue:9 Volume:60 Page:2761-2767
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Persson Karl-Magnus,Berg Martin,Borg Mattias B.,Wu Jun,Johansson Sofia,Svensson Johannes,Jansson Kristofer,Lind Erik,Wernersson Lars-Erik

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6582683/06563112.pdf?arnumber=6563112

Cited by 51 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. L_g = 60 nm In_0.53 Ga_0.47 As MBCFETs: From g_{m_max} = 13.7 mS/üm and Q = 180 to virtual-source modeling;2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits);2023-06-11

2. Enhanced Device Characteristics of InGaAs MOSFETs Using High Switching Speed Ferroelectric Material;2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT);2023-04-17

3. Analytical and Numerical Investigation of Nanowire Transistor X-ray Detector;Materials;2023-03-27

4. Radio Frequency Characteristics of InGaAs FE-FETs With Scaled Channel Length;IEEE Transactions on Electron Devices;2023-02

5. Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts;Electronics;2022-08-31

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