Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling-Reference-Cited by-同舟云学术

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L_g = 60 nm In_0.53 Ga_0.47 As MBCFETs: From g_{m_max} = 13.7 mS/üm and Q = 180 to virtual-source modeling

Published:2023-06-11 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Yoo J.-H.¹,Jo H.-B.¹,Lee I.-G.¹,Choi S.-M.¹,Baek J.-M.¹,Lee S T.²,Jang H.²,Kong M W.²,Kim H H.¹,Lee H J.¹,Kim H.-J.¹,Jeong H.-S.¹,Park W.-S.¹,Ko D H.³,Shin S. H.⁴,Kwon H.-M.⁴,Kim S K.⁵,Kim J G.⁵,Yun J.⁵,Kim T.⁵,Shin K.-Y.⁶,Kim T.-W.⁶,Shin J.-K.¹,Lee J.-H.¹,Shin C.-S.²,Seo K.-S.²,Kim D.-H.¹

Affiliation:

1. Kyungpook National University

2. Korea Advanced Nano Fab Center

3. Yonsei University

4. Korea Polytechnics

5. QSI

6. University of Ulsan

Funder

Samsung

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10185199/10185158/10185250.pdf?arnumber=10185250

Reference26 articles.

1. Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

2. Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate

3. A III–V nanowire channel on silicon for high-performance vertical transistors

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