High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates-Reference-Cited by-同舟云学术

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High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates

Published:1998 Issue:9 Volume:34 Page:922
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Sullivan G.J.,Higgins J.A.,Chen M.Y.,Yang J.W.,Chen Q.,Pierson R.L.,McDermott B.T.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19980601?crawler=true&mimetype=application/pdf

Reference13 articles.

1. Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency

2. CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz

3. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

4. Short-channel Al0.5Ga0.5N/GaN MODFETs with power density > 3 W/mm at 18 GHz

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT;Journal of Semiconductors;2010-10

2. Effect of PECVD of SiO2 passivation layers on GaN and InGaP;Solid-State Electronics;2001-12

3. High breakdown voltage GaN HFET with field plate;Electronics Letters;2001

4. Fabrication and performance of GaN electronic devices;Materials Science and Engineering: R: Reports;2000-12

5. GaN Electronics;Advanced Materials;2000-11

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