Effect of PECVD of SiO2 passivation layers on GaN and InGaP-Reference-Cited by-同舟云学术

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Effect of PECVD of SiO2 passivation layers on GaN and InGaP

Published:2001-12 Issue:12 Volume:45 Page:2093-2096
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Baik K.H.,Park P.Y.,Luo B.,Lee K.P.,Shin J.H.,Abernathy C.R.,Hobson W.S.,Pearton S.J.,Ren F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Lee JW, Ren F. In: Shul RJ, Pearton SJ, editors. Handbook of advanced plasma processing techniques. Berlin: Springer, 2000

2. GaN: Processing, defects, and devices

3. Structural properties of Ga[sub 2]O[sub 3](Gd[sub 2]O[sub 3])–GaAs interfaces

4. Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation of SiO$_{2}$ Passivation Thin Film for Improved the Organic Light-Emitting Device Life Time;Japanese Journal of Applied Physics;2011-08-22

2. Preparation of SiO2Passivation Thin Film for Improved the Organic Light-Emitting Device Life Time;Japanese Journal of Applied Physics;2011-08-01

3. PECVD oxide as intermediate film for wafer bonding: Impact of residual stress;Microelectronic Engineering;2010-11

4. The silicon oxynitride layer deposited at low temperature for high-brightness GaN-based light-emitting diodes;Solid-State Electronics;2006-03

5. Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors;Journal of Electronic Materials;2004-05

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