Enhancement-mode In0.52Al0.48As∕In0.53Ga0.47As∕InP HEMT utilising Ir∕Ti∕Pt∕Au gate
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20051504?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Pt-based gate enhancement-mode InAlAs/InGaAs HEMTs for large-scale integration
2. High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologies
3. Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP
4. High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-in GaAs substrates
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1. Fabrication of 45 nm high In component metamorphic In 0.7 Ga 0.3 As/In 0.6 Ga 0.4 As composite‐channel high electron‐mobility transistors on GaAs substrates;Electronics Letters;2016-02
2. Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals;Materials Science in Semiconductor Processing;2015-02
3. Schottky barrier characteristics and interfacial reactions of Ti on n-In0.52Al0.48As;Applied Physics Letters;2007-07-09
4. Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs∕InGaAs high electron mobility transistors;Applied Physics Letters;2006-11-20
5. 0.15-$muhboxm$-Gate InAlAs/InGaAs/InP E-HEMTs Utilizing Ir/Ti/Pt/Au Gate Structure;IEEE Electron Device Letters;2006-11
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