Fabrication of 45 nm high In component metamorphic In 0.7 Ga 0.3 As/In 0.6 Ga 0.4 As composite‐channel high electron‐mobility transistors on GaAs substrates-Reference-Cited by-同舟云学术

Fabrication of 45 nm high In component metamorphic In 0.7 Ga 0.3 As/In 0.6 Ga 0.4 As composite‐channel high electron‐mobility transistors on GaAs substrates

Published:2016-02 Issue:4 Volume:52 Page:318-319
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Kang Weihua¹,Zhang Xiaodong²,Ji Xian¹,Cai Yong²,Zhou Jiahui¹,Xu Wenjun¹,Li Qi³,Xiao Gongli¹,Zhang Baoshun²,Li Haiou¹

Affiliation:

1. Guangxi Experiment Center of Information ScienceGuilin University of Electronic TechnologyGuilin541004People's Republic of China

2. Key Laboratory of Nano‐Devices and ApplicationsSuzhou Institute of Nano‐Tech and Nano‐Bionics, Chinese Academy of SciencesSuzhouQiLi JiangsuPeople's Republic of China

3. Guangxi Key Laboratory of Wireless Wideband Communication and Signal ProcessingGuilin University of Electronic TechnologyGuilinPeople's Republic of China

Funder

National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.2126

Reference9 articles.

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2. Fabrication of 150‐nm T‐gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by MOCVD;Li H.;IEEE Electron Device Lett.,2011

3. 35‐nm zigzag T‐gate In0.52Ga0.48As/In0.53Ga0.47As metamorphic GaAs HEMTs with an ultrahigh fmax of 520 GHz;Lee K.‐S.;IEEE Electron Device Lett.,2007

4. 1.9 GHz low noise amplifier using high linearity and low‐noise composite‐channel HEMTs;Cheng Z.;Microw. Opt. Technol. Lett.,2007