1.9-GHz low noise amplifier using high-linearity and low-noise composite-channel HEMTs-Reference-Cited by-同舟云学术

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1.9-GHz low noise amplifier using high-linearity and low-noise composite-channel HEMTs

Published:2007 Issue:6 Volume:49 Page:1360-1362
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Cheng Zhiqun,Cai Yong,Liu Jie,Zhou Yugang,Lau Kei May,Chen Kevin J.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. A gallium~nitride push~pull microwave power amplifier

2. Effects of output harmonic termination on PAE and output power of AlGaN/GaN HEMT power amplifier

3. Broadband microwave noise characteristics of high-linearity composite-channel Al/sub 0.3/Ga/sub 0.7/N/Al/sub 0.05/Ga/sub 0.95/N/GaN HEMTs

4. High Microwave and Noise Performance of 0.17-<tex>$muhbox m$</tex>AlGaN–GaN HEMTs on High-Resistivity Silicon Substrates

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of 45 nm high In component metamorphic In 0.7 Ga 0.3 As/In 0.6 Ga 0.4 As composite‐channel high electron‐mobility transistors on GaAs substrates;Electronics Letters;2016-02

2. Wave approach for noise modeling of gallium nitride high electron-mobility transistors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2015-12-21

3. GaN HEMT noise modeling based on 50-Ω noise factor;Microwave and Optical Technology Letters;2015-02-24

4. Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics;International Journal of Antennas and Propagation;2013

5. Effect of composited-layer AlyGa1-yN on performances of AlGaN/GaN HEMT with unintentionally doping barrier AlxGa1-xN;Microwave and Optical Technology Letters;2011-03-25

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