Schottky barrier characteristics and interfacial reactions of Ti on n-In0.52Al0.48As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2756313
Reference16 articles.
1. Schottky barrier heights of n-type and p-type Al/sub 0.48/In/sub 0.52/As
2. Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP
3. Schottky barrier heights of n-type and p-type Al/sub 0.48/In/sub 0.52/As
4. 1.09‐eV Schottky barrier height of nearly ideal Pt/Au contacts directly deposited onn‐ andp+n‐Al0.48In0.52As layers
5. Measurements of thermally induced nanometer-scale diffusion depth of Pt∕Ti∕Pt∕Au gate metallization on InAlAs∕InGaAs high-electron-mobility transistors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Annealing effect on the barrier characteristics and interface properties of Au/Pt/Ti/n-InAlAs Schottky contacts;Surfaces and Interfaces;2023-07
2. Barrier characteristics and interface properties of Au/Ti/n-InAlAs Schottky contacts;Materials Science in Semiconductor Processing;2018-02
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