High performance CW 1.26 [micro sign]m GaInNAsSb-SQW and 1.20 [micro sign]m GaInAsSb-SQW ridge lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20001228?crawler=true&mimetype=application/pdf
Reference11 articles.
1. Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
2. 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
3. High-temperature characteristic in 1.3-/spl mu/m-range highly strained GaInNAs ridge stripe lasers grown by metal-organic chemical vapor deposition
4. 1.29 [micro sign]m GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance
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