Effect of on band alignment of compressively strained Ga1−xInxNy As1−y−zSbz/GaAs quantum well structures
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference42 articles.
1. Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime
2. Evolution of Carrier Distribution and Defects in InGaAsN/GaAs Quantum Wells with Composition Fluctuation
3. Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content
4. Molecular beam epitaxy of GaNAs and GaInNAs
5. OC-48 capable InGaAsN vertical cavity lasers
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1. Frequency response optimization of P-I-N photodiode based on InGaAsN lattice matched to GaAs for High-Speed photodetection applications;Optics & Laser Technology;2022-01
2. Modeling and simulation of GaAsPN / GaP quantum dot structure for solar cell in intermediate band solar cell applications;International Journal of Energy Research;2021-08
3. Biaxial strain effects on the band structure and absorption coefficient of GaAs1-x-yNxBiy/GaAs MQWs calculated using k.p method;Optik;2020-12
4. Nonlinear intersubband absorption coefficient in an Al Ga1−As/GaAs quantum cascade laser-like profile;Optik;2020-01
5. Performance of the structure AlxGa1-xAs1-yNy/Ge for solar cell applications;Optik;2018-10
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