Performance of the structure AlxGa1-xAs1-yNy/Ge for solar cell applications
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference34 articles.
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3. Red shift of photoluminescence and absorption in dilute GaAsN alloy layers;Weyers;Jpn. J. Appl. Phys.,1992
4. Molecular beam epitaxy of GaNAs and GaInNAs;Kondow;Semicond. Sci. Technol.,2002
5. Band parameters for nitrogen-containing semiconductors;Vurgaftman;J. Appl. Phys.,2003
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1. Theoretical electronic and optical properties of AlGaAsN/GaAs quantum well using 10 band kp approach;Indian Journal of Physics;2023-06-12
2. First-principle investigation of monoclinic (Al x In y Ga1−x−y )2O3 quaternary alloys;Semiconductor Science and Technology;2020-01-17
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