Heteroepitaxial growth of CdTe films on (100) GaAs treated with Sb by low-pressure metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Heteroepitaxial growth of CdTe films on (100) GaAs treated with Sb by low-pressure metalorganic vapor phase epitaxy

Published:2008-07 Issue:15 Volume:310 Page:3440-3442
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Tahashi Masahiro,Uzura Shingo,Goto Hideo,Ido Toshiyuki

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. The growth of high quality CdxHg1−xTe by MOVPE onto GaAs substrates

2. The organometallic heteroepitaxy of CdTe and HgCdTe on GaAs substrates

3. X-ray double-crystal diffraction studies of CdTe/GaAs heteroepitaxial layers

4. Growth and Characterization of Thick (100) CdTe Layers on (100) GaAs and (100) GaAs/Si Substrates by Metalorganic Vapor Phase Epitaxy

5. Antimony Treatment Effect on Cd1-xMnxTe Growth on GaAs by Metal-Organic Vapor Phase Epitaxy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. One-step fast deposition of thick epitaxial CdZnTe film on (001)GaAs by close-spaced sublimation;CrystEngComm;2012

2. Crystal Growth and Surfaces;CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications;2010

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