Exciton and donor - acceptor recombination in undoped GaN on Si(111)-Reference-Cited by-同舟云学术

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Exciton and donor - acceptor recombination in undoped GaN on Si(111)

Published:1997-11-01 Issue:11 Volume:12 Page:1396-1403
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Calle F,Sánchez F J,Tijero J M G,Sánchez-García M A,Calleja E,Beresford R

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. GaN, AlN, and InN: A review

2. Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers

3. Fundamental energy gap of GaN from photoluminescence excitation spectra

4. Exciton fine structure in undoped GaN epitaxial films

5. Free and bound excitons in thin wurtzite GaN layers on sapphire

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