Structural and photoluminescence study of thin GaN and AlN/GaN nanowires-Reference-Cited by-同舟云学术

Structural and photoluminescence study of thin GaN and AlN/GaN nanowires

Published:2023-04 Issue:10 Volume:34 Page:
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Abdel All Naglaa^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s10854-023-10297-x.pdf

Reference37 articles.

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2. S. Kako, C. Santori, K. Hoshino, S. Götzinger, Y. Yamamoto, Y. Arakawa, Nat. Mater. 5, 887 (2006)

3. J. Li, K.B. Nam, M.L. Nakarmi, J.Y. Lin, H.X. Jiang, Appl. Phys. Lett. 81, 3365 (2002)

4. M. Almokhtar, M. Kimura, S. Emura, and H. Asahi, in Proc. 12th Asia Pac. Phys. Conf. APPC12 Journal of the Physical Society of Japan, 2014.

5. M.E. Levinshtein, S.L. Rumyantsev, M.S. Shur, Properties of Advanced Semiconductor Materials: GaN AIN, InN, BN, SiC (SiGe John Wiley & Sons, New York, 2001)

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