UV Emission from GaN Wires with m-Plane Core–Shell GaN/AlGaN Multiple Quantum Wells-Reference-Cited by-同舟云学术

UV Emission from GaN Wires with m-Plane Core–Shell GaN/AlGaN Multiple Quantum Wells

Published:2020-09-07 Issue:39 Volume:12 Page:44007-44016
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Grenier Vincent¹^ORCID,Finot Sylvain²,Jacopin Gwénolé²^ORCID,Bougerol Catherine²^ORCID,Robin Eric³,Mollard Nicolas³,Gayral Bruno¹,Monroy Eva¹^ORCID,Eymery Joël⁴^ORCID,Durand Christophe¹^ORCID

Affiliation:

1. Université Grenoble Alpes, CEA, IRIG, PHELIQS, NPSC, 38000 Grenoble, France

2. Université Grenoble Alpes, CNRS, Institut Néel, 38000 Grenoble, France

3. Université Grenoble Alpes, CEA, IRIG, MEM, LEMMA, 38000 Grenoble, France

4. Université Grenoble Alpes, CEA, IRIG, MEM, NRS, 38000 Grenoble, France

Funder

Irish Research Council

Teagasc

Minist?re de l'Enseignement Sup?rieur et de la Recherche Scientifique

Universit? Grenoble Alpes

Minist?re des Affaires Etrang?res et du D?veloppement International

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c08765

Reference54 articles.

1. Springer Series in Materials Science;Shur M.,2012

2. Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

3. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

4. Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array

5. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

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