Free and bound excitons in thin wurtzite GaN layers on sapphire-Reference-Cited by-同舟云学术

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Free and bound excitons in thin wurtzite GaN layers on sapphire

Published:1996-05-01 Issue:5 Volume:11 Page:712-716
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Merz C,Kunzer M,Kaufmann U,Akasaki I,Amano H

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting Devices

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers

4. Luminescence in epitaxial GaN : Cd

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