The growth of n-type GaSb by metal-organic chemical vapour deposition: effects of two-band conduction on carrier concentrations and donor activation
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference26 articles.
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1. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
2. Intrinsic broadening of the mobility spectrum of bulk n-type GaAs;New Journal of Physics;2014-11-14
3. Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation;Semiconductor Science and Technology;2011-04-11
4. Raman scattering determination of the energy difference between Γ and L conduction band minima in Ga1−xInxAsySb1−y;Applied Physics Letters;2010-08-30
5. Raman spectroscopic determination of electron concentration in n-type GaInAsSb;Journal of Applied Physics;2009-12-15
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