Se and Te doping in LP-MOCVD-grown GaSb using H2Se and DETe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. InAs-GaSb hot electron transistors grown by metalorganic chemical vapor deposition
2. Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
3. Growth and characterization of undoped and N-type (Te) doped MOVPE grown gallium antimonide
4. Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3
5. Emergence of a periodic mode in the so-called turbulent region in a circular Couette flow
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1. Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates;Journal of Crystal Growth;2018-08
2. GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays;Applied Physics Letters;2015-03-16
3. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
4. Surface morphology, electrical and optical properties n-type doped MOCVD grown GaSb using dimethyltellurium;International Journal of Materials Research;2011-11-01
5. Low-resistive metal/n+-InAsSb/n-GaSb contacts;Semiconductor Science and Technology;2006-07-21
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