Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103118
Reference12 articles.
1. Room Temperature Operation of Al0.17Ga0.83Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
2. Room Temperature Operation of Al0.17Ga0.83Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
3. 2.2 μm GaInAsSb/AlGaAsSb injection lasers with low threshold current density
4. Optically pumped laser oscillation at 3.9 μm from Al0.5Ga0.5Sb/InAs0.91Sb0.09/Al0.5Ga0.5Sb double heterostructures grown by molecular beam epitaxy on GaSb
5. Liquid‐phase‐epitaxial InAsySb1−yon GaSb substrates using GaInAsSb buffer layers: Growth, characterization, and application to mid‐IR photodiodes
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