2.2 μm GaInAsSb/AlGaAsSb injection lasers with low threshold current density
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98860
Reference9 articles.
1. Heavy metal fluoride glasses and fibers: A review
2. Room Temperature Operation of the InGaAsSb/AlGaAsSb DH Laser at 1.8 µm Wavelength
3. Injection InGaSbAs lasers emitting radiation of wavelengths 1.9–2.3μ at room temperature
4. Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy
5. Band-to-band auger effect in long wavelength multinary III-V alloy semiconductor lasers
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1. Electrical behaviour of Au/InGaAsSb and Au/GaSb junctions;2008 International Conference on Advanced Semiconductor Devices and Microsystems;2008-10
2. Bias selective operation of Sb-based two-color photodetectors;SPIE Proceedings;2006-08-31
3. Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 µm;Journal of Electronic Materials;2006-08
4. Theory of Mid-wavelength Infrared Laser Active Regions: Intrinsic Properties and Design Strategies;Mid-infrared Semiconductor Optoelectronics;2006
5. Characterization of the InAsSb/GaSb superlattices by Fourier transform infrared spectroscopy;Materials Chemistry and Physics;2003-02
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