Optically pumped laser oscillation at 3.9 μm from Al0.5Ga0.5Sb/InAs0.91Sb0.09/Al0.5Ga0.5Sb double heterostructures grown by molecular beam epitaxy on GaSb-Reference-Cited by-同舟云学术

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Optically pumped laser oscillation at 3.9 μm from Al0.5Ga0.5Sb/InAs0.91Sb0.09/Al0.5Ga0.5Sb double heterostructures grown by molecular beam epitaxy on GaSb

Published:1986-02-03 Issue:5 Volume:48 Page:315-317
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

van der Ziel J. P.,Chiu T. H.,Tsang W. T.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.96537

Reference11 articles.

1. Molecular beam epitaxial growth of In1−xGaxAs1−ySbylattice matched to GaSb

2. Optically pumped laser oscillation at 3.82 μm from InAs1−xSbxgrown by molecular beam epitaxy on GaSb

3. Liquid phase epitaxial growth of InAs1-xSbx on GaSb

4. Backside‐illuminated InAsSb/GaSb broadband detectors

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstration of InAsSb/AlInSb double-heterostructure detectors for room temperature operation in the 5- to 8-μm wavelength range;SPIE Proceedings;1999-04-07

2. Long Wavelength (λ > 2 μm) Semiconductor Lasers;Semiconductor Lasers II;1999

3. High-efficiency, high-temperature mid-infrared (λ ≥ 4 µm) InAsSb/GaSb lasers;Electronics Letters;1994-11-10

4. InAs1−xSbx/In1−yGayAs multiple‐quantum‐well heterostructure design for improved 4–5 μm lasers;Applied Physics Letters;1994-06-13

5. InAsSb/AlAsSb double‐heterostructure diode lasers emitting at 4 μm;Applied Physics Letters;1994-02-14

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