High-efficiency, high-temperature mid-infrared (λ ≥ 4 µm) InAsSb/GaSb lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19941301?crawler=true&mimetype=application/pdf
Reference8 articles.
1. High‐power diode‐laser‐pumped InAsSb/GaSb and GaInAsSb/GaSb lasers emitting from 3 to 4 μm
2. Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys
3. Choi, H.K., and Turner, G.W.: Unpublished, 1994
4. Feit, Z., and Le, H.Q.: Unpublished, 1994
5. Optically pumped laser oscillation at 3.9 μm from Al0.5Ga0.5Sb/InAs0.91Sb0.09/Al0.5Ga0.5Sb double heterostructures grown by molecular beam epitaxy on GaSb
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1. Optical-pumping injection cavity (OPIC) mid-IR "W" lasers with high efficiency and low loss;IEEE Photonics Technology Letters;2000-05
2. Type-II mid-infrared lasers;SPIE Proceedings;2000-04-18
3. High-efficiency midinfrared “W” laser with optical pumping injection cavity;Applied Physics Letters;1999-11-08
4. Optically pumped InAs/InGaSb type-II quantum-well lasers;SPIE Proceedings;1999-04-01
5. Progress in Antimonide-Based Mid-IR Lasers;MRS Proceedings;1999
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