Selenium residual doping of (AlGa)Sb/GaSb epilayers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350480
Reference8 articles.
1. Native defects in the AlxGa1−xSb alloy semiconductor
2. Deep donors in GaSb grown by molecular beam epitaxy
3. Sulfur doping behavior of gallium antimonide grown by molecular‐beam epitaxy
4. Use of implanted samples as standards in spark-source mass spectrometry with application to the analysis of III—V semiconductors
5. The influence of growth conditions on sulfur incorporation in GaAs grown by molecular beam epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The growth of n-type GaSb by metal-organic chemical vapour deposition: effects of two-band conduction on carrier concentrations and donor activation;Semiconductor Science and Technology;2004-06-22
2. On the use of dimeric antimony in molecular beam epitaxy;Journal of Crystal Growth;1995-11
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