The influence of growth conditions on sulfur incorporation in GaAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332636
Reference17 articles.
1. Molecular beam epitaxy
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5. The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs
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