Raman spectroscopic determination of electron concentration in n-type GaInAsSb
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3271351
Reference59 articles.
1. The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials
2. OMVPE growth of GaInAsSb in the 2–2.4μm range
3. Light scattering by free carrier excitations in semiconductors
4. Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAs
5. Coupled plasmon-LO phonon modes and Lindhard-Mermin dielectric function of n-GaAs
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1. GaSb band-structure models for electron density determinations from Raman measurements;Journal of Applied Physics;2023-04-20
2. Resonant tunneling of electrons in AlSb/GaInAsSb double barrier quantum wells;AIP Advances;2020-05-01
3. Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb;Semiconductor Science and Technology;2011-11-29
4. Raman scattering determination of the energy difference between Γ and L conduction band minima in Ga1−xInxAsySb1−y;Applied Physics Letters;2010-08-30
5. Raman scattering by LO-phonon–plasmon coupled modes inGa1−xInxAsySb1−y: Role of Landau damping;Physical Review B;2010-05-20
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