Effects of heavy-ion and light-ion irradiation on the room temperature carrier dynamics of InGaAs/GaAs quantum wells-Reference-Cited by-同舟云学术

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Effects of heavy-ion and light-ion irradiation on the room temperature carrier dynamics of InGaAs/GaAs quantum wells

Published:2006-03-30 Issue:5 Volume:21 Page:661-664
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Dhaka V D S,Tkachenko N V,Lemmetyinen H,Pavelescu E-M,Guina M,Tukiainen A,Konttinen J,Pessa M,Arstila K,Keinonen J,Nordlund K

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Ultra-fast fibre laser systems based on SESAM technology: new horizons and applications

2. Optical properties of ion irradiated and annealed InGaAs/GaAs quantum wells and semiconductor saturable absorber mirrors

3. Thermal stability of ion-irradiated InGaAs with (sub-) picosecond carrier lifetime

4. Temperature dependence of the absorption saturation relaxation time in light- and heavy-ion-irradiated bulk GaAs

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3. Formation and photoluminescence of GaAs1−xNx dilute nitride achieved by N-implantation and flash lamp annealing;Applied Physics Letters;2014-07-07

4. Defect clustering in irradiation of GaN by single and molecular ions;Vacuum;2014-07

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