Ultrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy-Reference-Cited by-同舟云学术

Ultrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy

Published:2014-06-23 Issue:13 Volume:6 Page:10022-10027
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Sun Jingya¹,Yang Yang¹,Khan Jafar I.¹,Alarousu Erkki¹,Guo Zaibing¹,Zhang Xixiang¹,Zhang Qiang¹,Mohammed Omar F.¹

Affiliation:

1. Solar and Photovoltaics Engineering Research Center, Division of Physical Sciences and Engineering and ‡Advanced Nanofabrication and Imaging Core Lab, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am5026159

Reference42 articles.

1. Electronic and optical properties of anataseTiO2

2. Mesoscopic CH3NH3PbI3/TiO2 Heterojunction Solar Cells

3. Carbon-Deposited TiO2 3D Inverse Opal Photocatalysts: Visible-Light Photocatalytic Activity and Enhanced Activity in a Viscous Solution

4. Photocatalytic Activity of Doped and Undoped Titanium Dioxide Nanoparticles Synthesised by Flame Spray Pyrolysis

5. Exploring the Effect of Band Alignment and Surface States on Photoinduced Electron Transfer from CuInS2/CdS Core/Shell Quantum Dots to TiO2 Electrodes

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