Optical properties of ion irradiated and annealed InGaAs/GaAs quantum wells and semiconductor saturable absorber mirrors-Reference-Cited by-同舟云学术

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Optical properties of ion irradiated and annealed InGaAs/GaAs quantum wells and semiconductor saturable absorber mirrors

Published:2005-03-18 Issue:7 Volume:38 Page:985-989
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Hakkarainen T,Pavelescu E-M,Arstila K,Dhaka V D S,Hakulinen T,Herda R,Konttinen J,Tkachenko N,Lemmetyinen H,Keinonen J,Pessa M

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/38/i=7/a=004/pdf

Reference19 articles.

1. Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an antiresonant semiconductor Fabry–Perot saturable absorber

2. Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers

3. Low-loss GaInNAs saturable absorber mode locking a 1.3-μm solid-state laser

4. Dilute nitride saturable absorber mirrors for optical pulse generation

5. Femtosecond Neodymium-Doped Fiber Laser Operating in the 894–909-nm Spectral Range

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1. Effects of temperature and energy on the radiation response of GaAs/AlAs and GaAs/AlGaAs superlattices;Radiation Physics and Chemistry;2020-09

2. Generation, optimization, and application of ultrashort femtosecond pulse in mode-locked fiber lasers;Progress in Quantum Electronics;2020-05

3. Ab initio molecular dynamics simulation of the radiation damage effects of GaAs/AlGaAs superlattice;Journal of Nuclear Materials;2019-04

4. First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility;Nanoscale Research Letters;2018-09-26

5. A comparative study of low energy radiation response of AlAs, GaAs and GaAs/AlAs superlattice and the damage effects on their electronic structures;Scientific Reports;2018-01-31

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