A MOSFET electron mobility model of wide temperature range (77 - 400 K) for IC simulation-Reference-Cited by-同舟云学术

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A MOSFET electron mobility model of wide temperature range (77 - 400 K) for IC simulation

Published:1997-04-01 Issue:4 Volume:12 Page:355-358
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chain Kenneth,Huang Jian-hui,Duster Jon,Ko Ping K,Hu Chenming

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Physical understanding of low-field carrier mobility in silicon MOSFET inversion layer

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