Influence of Interface Traps on MOSFET thermal coefficients and its effects on the ZTC current-Reference-Cited by-同舟云学术

Influence of Interface Traps on MOSFET thermal coefficients and its effects on the ZTC current

Published:2022-10 Issue: Volume:137 Page:114752
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

García Cozzi R.,Redín E.,Garcia–Inza M.,Sambuco Salomone L.,Faigón A.,Carbonetto S.^ORCID

Funder

Universidad de Buenos Aires Secretaria de Ciencia y Tecnica

Secretaría de Ciencia y Técnica, Universidad de Buenos Aires

Agencia Nacional de Promoción Científica y Tecnológica

Agencia Nacional de Promoción de la Investigación, el Desarrollo Tecnológico y la Innovación

Universidad de Buenos Aires

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. An integrated ISFET sensor array;Nakazato;Sensors,2009

2. ISFET based microsensors for environmental monitoring;Jimenez-Jorquera;Sensors,2009

3. A scalable ISFET sensing and memory array with sensor auto-calibration for on-chip real-time DNA detection;Moser;IEEE Trans. Biomed. Circuits Syst.,2018

4. The development of a MOS dosimetry unit for use in space;Adams;IEEE Trans. Nucl. Sci.,1978

5. A new radiotherapy surface dose detector: The MOSFET;Butson;Med. Phys.,1996

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface traps in the sub-3 nm technology node: A comprehensive analysis and benchmarking of negative capacitance FinFET and nanosheet FETs - A reliability perspective from device to circuit level;Microelectronics Reliability;2024-09

2. Impact of interface trap charges on analog/RF and linearity performances of PGP negative capacitance FET;Microelectronics Reliability;2023-04