Modeling of the Subthreshold Swing in Cryogenic MOSFET With the Combination of Gaussian Band Tail and Gaussian Interface State-Reference-Cited by-同舟云学术

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Modeling of the Subthreshold Swing in Cryogenic MOSFET With the Combination of Gaussian Band Tail and Gaussian Interface State

Published:2024-02 Issue:2 Volume:71 Page:1173-1178
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Xinyi¹^ORCID,Wu Zhicheng²,Bu Jianhui¹^ORCID,Li Bo¹^ORCID,Han Zhengsheng¹

Affiliation:

1. Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China

2. State Key Laboratory of Fabrication Technologies for Integrated Circuits and the Laboratory of Microelectronics Devices and Integrated Technology, Chinese Academy of Sciences, Beijing, China

Funder

Youth Innovation Promotion Association CAS

Chinese Academy of Science

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10413236/10367842.pdf?arnumber=10367842

Reference32 articles.

1. 1.4 Quantum computing - the next challenge in circuit and system design

2. New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications

3. Cryo-CMOS Circuits and Systems for Quantum Computing Applications

4. Cryo-CMOS for quantum computing

5. Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

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