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Improved photoluminescence from electrochemically passivated GaSb

Published:1997-04-01 Issue:4 Volume:12 Page:413-418
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Salesse A,Alabedra R,Chen Y,Lakrimi M,Nicholas R J,Mason N J,Walker P J

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Electrochemical sulfur passivation of GaAs

2. Passivation of GaSb by sulfur treatment

3. Piezoelectric effects in superlattices

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates;Journal of Crystal Growth;2018-08

2. The Surface and Photoluminescence Properties of GaAs Passivated by Wet Chemical Method;Advanced Materials Research;2015-07

3. Photoluminescence Properties of the GaSb Nanostructures Irradiated by Femtosecond Laser;Nanoscience and Nanotechnology Letters;2015-02-01

4. Tailoring the photoluminescence characteristics of p-type GaSb: The role of surface chemical passivation;Chemical Physics Letters;2013-01

5. Improvement of Surface Passivation Homogeneity of Gallium Antimonide by Bromination;Integrated Ferroelectrics;2012-01

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