Photoluminescence Properties of the GaSb Nanostructures Irradiated by Femtosecond Laser-Reference-Cited by-同舟云学术

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Photoluminescence Properties of the GaSb Nanostructures Irradiated by Femtosecond Laser

Published:2015-02-01 Issue:2 Volume:7 Page:117-120
ISSN:1941-4900
Container-title:Nanoscience and Nanotechnology Letters
language:en
Short-container-title:nanosci nanotechnol lett

Author:

Fang Dan,Fang Xuan,Li Yongfeng,Yao Bin,Zhao Haifeng,Wei Zhipeng,Tang Jilong,Du Charlie,Li Jinhua,Ma Xiaohui,Wang D. D.,Yan Y. S.

Publisher

American Scientific Publishers

Subject

General Materials Science

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laser and electron beam-induced formation of Ag/Cr structures on Ag2CrO4;Physical Chemistry Chemical Physics;2019

2. Effect of Nitrogen Passivation on Optical Properties of Te-doped GaSb;ACTA PHOTONICA SINICA;2018

3. Numerical Study on the Dependence of Surface Topography with Sputter Etching Process;Journal of Nanoscience and Nanotechnology;2016-09-01

4. Optical Properties of Arsenic-Doped MgZnO Films Treated by Thermal Annealing;Nanoscience and Nanotechnology Letters;2015-10-01

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