Author:
Lakrimi M,Martin R W,Lopez C,Symons D M,Chidley E T R,Nicholas R J,Mason N J,Walker P J
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
17 articles.
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1. Tensometric Characteristics of GaSb Strain Gauges;2021 IEEE International Conference on Information and Telecommunication Technologies and Radio Electronics (UkrMiCo);2021-11-29
2. Influence of interdiffusion on strained GaInSb/InAs material and its application on long-wavelength infrared photodectors;SPIE Proceedings;1999-10-26
3. Structure and interfacial stability of (111)-oriented InAsSb/InAs strained-layer multiquantum well structures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-11
4. Improved photoluminescence from electrochemically passivated GaSb;Semiconductor Science and Technology;1997-04-01
5. The growth of antimonides by MOVPE;Progress in Crystal Growth and Characterization of Materials;1997-01