Affiliation:
1. Changchun University of Science and Technology
2. Chinese Academy of Sciences
Abstract
The optical and chemical properties of gallium arsenide (GaAs) surfaces treated by ammonium sulfide ((NH4)2S) treatments were studied via low-temperature photoluminescence (PL). From the PL mapping and Atomic Force Microscope (AFM) results, the treatment process by (NH4)2S is quite effective to remove the oxide layer of GaAs.The PL intensity of (NH4)2S-passivated sample was higher than the untreated sample, and the homogeneity of passivated surface was much better. This strategy provides superior promising passivation method for III-V compound semiconductor material in high-speed and optoelectronic device applications.
Publisher
Trans Tech Publications, Ltd.
Reference17 articles.
1. Simonsmeier T, Ivankov A, Bauhofe W, Sulphur passivation of gallium antimonide surfaces, J. Appl. Phys. 97(2005)084910.
2. Brennana B, MilojevicbM, Hinkleb C L, Optimisation of the Ammonium Sulphide (NH4)2S Passivation Process on In0. 53Ga0. 47As, Appl. Surface Sci. 257(2011)4082-4090.
3. Lai Po-Hsien, Chen Chun Wei, Kao Chung I, Influences of Sulfur Passivation on Temperature-Dependent Characteristics of an AlGaAs/InGaAs/GaAs, IEEE. 53(2006).
4. Hanbing, Wang Nili, Tang Hengjing, Research of Surface Characteristics of InGaAs Treated by Sulfide, Laser and Infared. (2007)1001-5078.
5. R. J. Shul, A. J. Howard, C. B. Vartuli, Temperature dependent electron cyclotron resonance etching of InP, GaP, and GaAs, J. Vac. Sci. Technol. A 14(1996)1102.
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献