Tailoring the photoluminescence characteristics of p-type GaSb: The role of surface chemical passivation-Reference-Cited by-同舟云学术

Tailoring the photoluminescence characteristics of p-type GaSb: The role of surface chemical passivation

Published:2013-01 Issue: Volume:556 Page:182-187
ISSN:0009-2614
Container-title:Chemical Physics Letters
language:en
Short-container-title:Chemical Physics Letters

Author:

Wang Bo,Wei Zhipeng,Li Mei,Liu Guojun,Zou Yonggang,Xing Guozhong,Tan Thiam Teck,Li Sean,Chu Xueying,Fang Fang,Fang Xuan,Li Jinhua,Wang Xiaohua,Ma Xiaohui

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference26 articles.

1. GaAs/GaSb nanowire heterostructures grown by MOVPE

2. Characterization of sulfur passivated n-GaSb using transmission electron microscopy and the influence of passivationon ohmic contact resistance

3. The role of Ce dopant on the electrical properties of GaSb single crystals, measured by far-infrared Fourier transform spectroscopy

4. A comparative study of GaSb (100) surface passivation by aqueous and nonaqueous solutions

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