The subband structure of modulation-doped pseudomorphic GaAs/(In,Ga)As/(Al,Ga)As layers-Reference-Cited by-同舟云学术

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The subband structure of modulation-doped pseudomorphic GaAs/(In,Ga)As/(Al,Ga)As layers

Published:1990-07-01 Issue:7 Volume:5 Page:669-674
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Harris J J,Brugmans M,Dawson P,Gowers J P,Hellon C M,Hewett J,Fewster P F,Roberts C,Woodbridge K,Auzoux S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/5/i=7/a=006/pdf

Reference27 articles.

1. Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor

2. 0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHz

3. Low‐temperature mobility of two‐dimensional electron gas in selectively doped pseudomorphicN‐AlGaAs/GaInAs/GaAs structures

4. Growth condition studies of pseudomorphic InGaAs/GaAs strained layer structures and InGaAs/AlGaAs high electron mobility transistor layer properties

5. Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of Quantum and Classical Scattering Times in Pseudomorphic AlGaAs/InGaAs/GaAs by Means of Pressure;physica status solidi (b);1996-11-01

2. Observation of oscillatory linewidth behavior in the magnetoluminescence of a modulation-dopedInxGa1−xAs quantum well;Physical Review B;1996-02-15

3. Enhancement of the in-plane effective mass of electrons in modulation-dopedInxGa1−xAs quantum wells due to confinement effects;Physical Review B;1993-07-15

4. Optical and electrical investigation of subband populations, mobilities and Fermi level pinning in delta-doped quantum wells;Semiconductor Science and Technology;1993-01-01

5. Photoluminescence characterization of gated pseudomorphic AlGaAs/InGaAs/GaAs modulation‐doped field‐effect transistors;Applied Physics Letters;1992-09-07

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