Study of Quantum and Classical Scattering Times in Pseudomorphic AlGaAs/InGaAs/GaAs by Means of Pressure
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Quantum and classical mobility determination of the dominant scattering mechanism in the two-dimensional electron gas of an AlGaAs/GaAs heterojunction
2. Quantum lifetime measurements of the two-dimensional electron gas at the inverted AlGaAs/GaAs interface
3. Small-angle scattering in two-dimensional electron gases
4. The subband structure of modulation-doped pseudomorphic GaAs/(In,Ga)As/(Al,Ga)As layers
5. Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigations
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1. Transport and quantum lifetimes of electrons in modulation doped Al0.3Ga0.7As/In0.15Ga0.85As double quantum well structure;Physics Letters A;2023-06
2. Electron effective masses, nonparabolicity and scattering times in one side delta-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells at high electron density limit;Physica E: Low-dimensional Systems and Nanostructures;2021-09
3. Electron Effective Mass and Momentum Relaxation Time in One-Sided δ-Doped PHEMT AlGaAs/InGaAs/GaAs Quantum Wells with High Electron Density;Technical Physics Letters;2018-12
4. Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In[sub 0.2]Ga[sub 0.8]As/Al[sub 0.2]Ga[sub 0.8]As quantum well grown by metalorganic vapor phase epitaxy;Applied Physics Letters;2000
5. Optimization of layer structure for InGaAs channel pseudomorphic HEMTs;Journal of Crystal Growth;1999-05
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