Growth condition studies of pseudomorphic InGaAs/GaAs strained layer structures and InGaAs/AlGaAs high electron mobility transistor layer properties
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Published:1989-03
Issue:2
Volume:7
Page:361
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
16 articles.
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