Low‐temperature mobility of two‐dimensional electron gas in selectively doped pseudomorphicN‐AlGaAs/GaInAs/GaAs structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100826
Reference11 articles.
1. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT
2. Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors
3. Mobility of the two-dimensional electron gas at selectively dopedn-typeAlxGa1−xAs/GaAs heterojunctions with controlled electron concentrations
4. Interface roughness scattering in GaAs/AlAs quantum wells
5. Calculated Electron Mobility of Two-Dimensional Electrons in AlInAs/InGaAs and InP/InGaAs Single Heterostructures
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2. Influence of silicon donor doping on electron transport in quantum wells AlGaAs/InGaAs/GaAs at different temperatures;IOP Conference Series: Materials Science and Engineering;2019-02-18
3. Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping;Semiconductors;2018-02
4. Peculiarities of Silicon-Donor Ionization and Electron Scattering in Pseudomorphous AlGaAs/InGaAs/GaAs Quantum Wells with Heavy Unilateral Delta-Doping;Technical Physics Letters;2018-02
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