Influence of silicon donor doping on electron transport in quantum wells AlGaAs/InGaAs/GaAs at different temperatures
Author:
Publisher
IOP Publishing
Subject
General Medicine
Link
http://stacks.iop.org/1757-899X/475/i=1/a=012034/pdf
Reference7 articles.
1. Low‐temperature mobility of two‐dimensional electron gas in selectively doped pseudomorphicN‐AlGaAs/GaInAs/GaAs structures
2. Low‐temperature mobility of two‐dimensional electrons in (Ga,In)As–(Al,In)As heterojunctions
3. Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In[sub 0.2]Ga[sub 0.8]As/Al[sub 0.2]Ga[sub 0.8]As quantum well grown by metalorganic vapor phase epitaxy
4. Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si δ-doping layer
5. Emitter Spacer Layers Influence on the Dynamic Characteristics of Resonant-Tunneling Diode
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