Low‐temperature mobility of two‐dimensional electrons in (Ga,In)As–(Al,In)As heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362481
Reference24 articles.
1. 0.05-µm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects
2. Electron mobilities in modulation doped Ga0.47In0.53As/Al0.48In0.52As heterojunctions grown by molecular beam epitaxy
3. Two‐dimensional electron gas at a molecular beam epitaxial‐grown, selectively doped, In0.53Ga0.47As‐In0.48Al0.52As interface
4. Estimation of alloy scattering potential in ternaries from the study of two‐dimensional electron transport
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