The scanning infrared microscope (SIRM) and its application to bulk GaAs and Si: a review
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/7/i=1A/a=021/pdf
Reference22 articles.
1. Infrared laser scanning microscopy in transmission: A new high‐resolution technique for the study of inhomogeneities in bulk GaAs
2. Investigation of oxide particles in Czochralski silicon heat treated for intrinsic gettering using scanning infrared microscopy
3. Direct observation of the principal deep level (EL2) in undoped semi‐insulating GaAs
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