Infrared laser scanning microscopy in transmission: A new high‐resolution technique for the study of inhomogeneities in bulk GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98669
Reference3 articles.
1. Inhomogeneity of the deep center el2 in GaAs observed by direct infra-red imaging
2. Observation of Lattice Defects in GaAs and Heat-treated Si Crystals by Infrared Light Scattering Tomography
3. Direct observation of an enhanced concentration of the principal deep level EL2 at single dislocations
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