Inhomogeneity of the deep center el2 in GaAs observed by direct infra-red imaging-Reference-Cited by-同舟云学术

Inhomogeneity of the deep center el2 in GaAs observed by direct infra-red imaging

Published:1984-01 Issue:1 Volume:13 Page:107-125
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Skolnickf M. S.,Brozel M. R.,Reed L. J.,Grant I.,Stirland D. J.,Ware R. M.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02659839.pdf

Reference21 articles.

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3. G.M. Martin, G. Jacob, G. Poiblaud, A. Goltzene and Schwab, Institute of Physics Conference Series No 59, p 281, (1982).

4. M.R. Brozel, I. Grant, R.M. Ware and D.J. Stirland, Appl. Phys. Lett.42, 610, (1983).

5. I. Grant, D. Rumsby, R. M. Ware, M.R. Brozel and B. Tuck, in Proceedings of the 2nd Conference on Semi-Insulating III-V Materials. Evian 1982, editors S. Makram-Ebeid and B. Tuck (Shiva, Orpington), p 98

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