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Scanning infrared microscopy study of thermal processing induced defects in low resistivity Si wafers

  • Published:2013-07-05 Issue:8 Volume:28 Page:085013
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Zhang Xinpeng,Ma Xiangyang,Yang Deren,Vanhellemont Jan

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modulation of the spin-orbit interaction and the transition probability of polaron in disk quantum dot under electromagnetic field;The European Physical Journal Plus;2020-02

2. Measuring oxygen and bulk microdefects in silicon;Handbook of Silicon Based MEMS Materials and Technologies;2020

3. Control of Intrinsic Point Defects in Single-Crystal Si and Ge Growth from a Melt;Defects and Impurities in Silicon Materials;2015

4. Oxygen and Bulk Microdefects in Silicon;Handbook of Silicon Based MEMS Materials and Technologies;2015

5. Oxide precipitate nucleation at 300 °C in low resistivity n-type Czochralski Si;physica status solidi (a);2013-09-17
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